1/f noise spectroscopy and noise tailoring of nanoelectronic devices

In this paper, we review the 1/f-type noise properties of nanoelectronic devices focusing on three demonstrative platforms: resistive switching memories, graphene nanogaps and single-molecule nanowires. The functionality such ultrasmall is confined to an extremely small volume, where bulk considerations loose their validity: relative contribution a fluctuator heavily depends its distance from device bottleneck, characteristics are sensitive nanometer-scale geometry details mostly non-classical transport mechanism. All these reflected by highly system-specific dependence active volume (and related resitance), frequency, or applied voltage. Accordingly, measurements serve as rich fingerprint relevant noise-generating mechanisms in studied systems. Finally, demonstrate that not only fundamental understanding targeted suppression fueled analysis, but novel probabilistic computing hardware platforms seek well tailorable nanoelectric sources.